Session T1-1: Low-frequency Noise Characterization as a Diagnostic Tool to Characterize Advanced Semiconductor Materials and Devices

Prof. Cor Claeys, KU Leuven, Belgium

T1-1: 9:00-10:15, Oct. 22, 2024, Tuesday

Title: Low-frequency Noise Characterization as a Diagnostic Tool to Characterize Advanced Semiconductor Materials and Devices

Abstract:

The potential of low frequency noise diagnostics for the characterization of semiconductor materials and devices will be demonstrated. First a brief review is given of the physics related to fundamental noise mechanisms (white noise, 1/f noise, GR noise). For scaled down technologies, Random Telegraph Signals (RTS) are becoming dominant. Noise analysis gives information on the quality of gate dielectrics and interfaces, outlines the impact of processing steps such as stress engineering, replacement gate processing, metallization schemes, 3D backside metallization etc. and can be correlated with the device reliability. Examples will be given of LF noise behavior of advanced CMOS devices like SOI devices, memory devices, FinFETs, tunnelFETs, nanowire transistors, 2D transistors, Gate-All-Around devices, etc. The noise performance of Ge-based and III-V technologies processed on a Si platform will also be addressed.

Biography:

Cor Claeys was Professor at the KU Leuven (Belgium) since 1990. He also was with imec, Leuven, Belgium from 1984 till 2016 and had different positions including, including and Director Strategic Relations. His main interests are semiconductor technology, device physics, low frequency noise phenomena, radiation effects and defect engineering. He is teaching a variety of short courses in different parts of the world (Europe, China, India and Brazil).
He co-edited books on “Low Temperature Electronics” and “Germanium-Based Technologies: From Materials to Devices” and wrote monographs on “Radiation Effects in Advanced Semiconductor Materials and Devices”, “Fundamental and Technological Aspects of Extended Defects in Germanium”, “Random Telegraph Signals in Semiconductor Devices” and “Metals in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control and Electrical Impact”. Two books are translated in Chinese. He (co)authored 16 book chapters, over 1200 conference presentations and more than 1400 technical papers (of which more than 430 in peer-reviewed scientific journal). He is editor/co-editor of 70 Conference Proceedings.
Prof. Claeys is a Fellow of the Electrochemical Society and of IEEE. He was Founder of the IEEE Electron Devices Benelux Chapter, Chair of the IEEE Benelux Section, elected Board of Governors Member and EDS Vice President for Chapters and Regions. He was EDS President in 2008-2009 and Division Director on the IEEE Board of Directors in 2012-2013. He is a recipient of the IEEE Third Millennium Medal and received the IEEE EDS Distinguished Service Award. He is a Distinguished Lecture of the IEEE Electron Devices Society. Within the Electrochemical Society, he was Chair of the Electronics & Photonics Division (2001-2003). In 2004, he received the ECS Electronics & Photonics Division Award. In 2016 he received the Semi China Sepcial Recognition Award for outstanding involvement in the China Semiconductor Technology International Conference (CSTIC).