Invited Talks

Name Affiliation Country/Region Topic
Yimao Cai Peking University China High-density and high-reliability RRAM for memory and computing applications
Yu(Kevin) Cao University of Minnesota USA Heterogeneous Integration for Energy-Efficient AI Computing
Mansun Chan Hong Kong University of Science & Technology China/HongKong 3-D Stacked Complementary MOS Technology
Jiezhi Chen Shandong University China Optimizing Flash Memory Towards Storage Class Memory Applications
Rong Chen HUST China TBD
Yuhua Cheng Peking University China TBD
Chao-Hsin Chien Yang Ming Chiao Tung University China/Taiwai Oxide semiconductor transistor or 2D channel Transistor
Yijun Cui Nanjing University of Aeronautics and Astronautics China Hardware security linking everything: from lightweight PUF to post-quantum cryptography hardware
Yann Deval University of Bordeaux France TBD

Yuan Gao

Institute of Microelectronics Singapore

TBD

Jyh-Chyurn Guo Yang Ming Chiao Tung University China/Taiwan TBD
Ming-Qiang Guo University of Macau China/Macau When Time Interleaving Encounters Oversampling in ADC
Ming He Peking University China Intelligent Electronics for Multimodal-Sensory Fusion and Perception
Yuhui He Huazhong University of Science and Technology China Complementary Memtransistor as Synapses for Brain-inspired Computing
Qing-An Huang Southeast University China Parity-time symmetry for LC passive wireless sensors
Makoto Ikeda The University of Tokyo Japan Template based design automation for crypto accelerator
Mahfuzul Islam Tokyo Institute of Technology Japan Digital LDO for low-power applications
Michiko Inoue NAIST Japan TBD
Hiroshi Iwai  Tokyo Tech Japan History of BiCMOS Technology Development for logic and RF in the 1980s and 1990s
Anquan Jiang Fudan University China Sub-nanosecond operation speeds of ferroelectric domain wall memory
Haruo Kobayashi Gunma University Japan Toward Unification of Digital Error Correction Algorithms for ADCs with Redundancy
Moufu Kong University of Electronic Science and Technology of China China SiC/GaN/Ga2O3 power devices
Mario Lanza KAUST Saudi Arab Hybrid 2D/CMOS microchips for memristive applications
Ching-Ting Lee Cheng Kung University China/Taiwan Monolithic Complementary Metal-Oxide-Semiconductor Integrated Circuits Using GaN-based Devices
Ming Li Peking University China Vertical channel transistor (VCT) for advanced logic and memory applications

Yuan Li

XDL Technologies Inc. China

Computing efficiency and Configurable Parallel Processor

Jyi-Tsong Lin Taiwan Sun Yiet Sun University China/Taiwan TBD
Yibo Lin Peking University China Analyzing Timing in Shorter Time: A Journey through Heterogeneous Parallelism for Static Timing Analysis
Liyuan Liu Institute of Semiconductors, CAS China Smart Vision Chip
Xiaoyan Liu Peking University China Neural Network Assisted MOSFETs Model Development (tentative)
Ziyu Liu Fudan University China

Development of Chip-to-wafer Hybrid Bonding for 3D Integration

Wayne Luk Imperial College London UK TBD
Souvik Mahapatra Indian Institute of Technology Bombay India Simulation of P/E Cycling and Retention loss in 3D CTF NAND Flash
Kyeong-Sik Min Kookmin Univ. Korea Emerging memory circuits for unconventional computing
Guofu Niu Auburn University USA TBD
Wai Tung Ng University of Toronto Canada TBD
Vojin G. Oklobdzija University of California USA Number Representation for Machine Learning and limitations of the current IEEE 754 FLP standard
Mikael Östling KTH Royal Institute of Technology Sweden The Status of WBG Devices Towards Net-Zero Solutions
Ya-Tao Peng University of Macau China/Macau Cryogenic Integrated Circuits for Quantum Applications: Present Status, Challenges, and Future Directions
Hao Qiu Nanjing University China TBD
Yiming Qu East China Normal University China New Reliability Issues of Nor-flash for Computing-In-Memory Application
Francois Rivet University of Bordeaux France TBD

Shubham Sahay

IIT India

TBD

Frank Schwierz Technical University Ilmenau Germany 6G Mobile Communications at THz Frequencies - Is the Needed Hardware at Hand?

Haiding Sun

University of Science and Technology of China China

Monolithic Integration of III-Nitrides Optoelectronics

He Tang University of Electronic Science and Technology of China China TBD
Li Tao SEU China Low-dimensional Semiconductor Enabled Wearable Circuits with Wireless Sensing and Communicating modules
Akira Tsuchiya The University of Shiga Prefecture Japan Device Modeling & Simulation
Changjin Wan Nanjing University China Building a Spiking Sensory Neuron with Oxide-based Neuromorphic Devices
C.C. Wang Taiwan Sun Yiet Sun University China/Taiwan PLL-based wide lock-in range CDR with coarse-fine tuning technique for fiber optical gyroscope system integration
Luda Wang Peking University China Nanopore Based MEMS Iontronic Devices
Runsheng Wang Peking University China Challenges of design for reliability in advanced CMOS technology: from single-mode to mixed-mode mechanisms
Heng Wu Peking University China Stacked Transistors for Next Generation Logic Technology
Xing Wu East China Normal University China In situ transmission electron microscopy study on advanced device reliability
Sixing Xiong RIKEN Japan Waterproof organic photovoltaics for wearable power sources
Jian-Bin Xu The Chinese University of Hong kong China/HongKong TBD
Jie Yang Westlake University China Event-driven Closed-loop Brain-machine Interface
Zuochang Ye Tsinghua University China TBD
Kiat Seng Yeo Singapore Univ. of Technology and Design/Tianjin Univ. Singapore High-Efficiency Power Amplifier Design for Bluetooth Low Energy Applications
You Yin Gunma University Japan Phase-change memory
Hongyu Yu Southern University of Science and Technology China Progress and outlook in GaN devices and its system implementation
Jian-Fu Zhang Liverpool John Moores University UK Predictive modelling of hot carrier degradation

Milin Zhang

Tsinghua University China TBD
Ming-Lei Zhang University of Macau China/Macau TBD
Weidong Zhang Liverpool John Moores University UK Switching Mechanisms of Ovonic Threshold Switching (OTS) Devices
Yue Zhang Beihang University China Spintronic Devices towards Advanced Computing Framework
Yi Zhao Zhejiang University China Orthorhombic-I (Pbca) Phase: Origin of Anti-ferroelectricity in HfZrO Films
Bing Zhou University of Macau China/Macau TBD
Peng Zhou Fudan University China The role of 2D materials in fusion with silicon Ics
Pingqiang Zhou Shanghai Tech University China Clock Aware Placement Considering Blockages