Invited Talks

 

Authors

Affiliations

Title

A. O’Neill, F. Arith, J. Urresti, K. Vasilevskiy, N. Wrightand, S. Olsen

Newcastle University, UK

High Mobility 4H-SiC MOSFET

Akira Matsuzawa

Tech Idea Co., Ltd.; Tokyo Institute of Technology, Japan.

Low Energy ADCs using Dynamic Amplifiers

Akira Toriumi

The University of Tokyo, Japan

Recent achievements and remaining challenges in Ge-MOSFETs from interface engineering viewpoints

An Chen1,2

1Semiconductor Research Corporation, Durham; 2 IBM Research, CA

New Directions of Nanoelectronics Research for Computing

Asen Asenov

The University of Glasgow and Synopsys, UK

TCAD Based Design Technology Co-Optimisation in Advanced CMOS Technology

Bi Wu1, Beibei Zhang1, Yansong Xu1, Zhaohao Wang1,2,3, Dijun Liu4, Youguang Zhang1 and Weisheng Zhao1,2,3

1 Beihang University, China; 2 Beihang University, China; 3Beihang University, China 4 China Academy of Information and Communications Technology (CAICT), China

Exploring potentials of NAND-like spintronics MRAM for cache design(Invited)

Boris Hudec,  Che-Chia Chang, and Tuo-Hung Hou

National Chiao-Tung University, Taiwan, China

Memristive devices by ALD: design aspects for high density 3D arrays for memory and neuromorphic applications

C. C. Chen1, Y. T.Cheng2

1National Central University, Taiwan, China; 2National Chiao Tung University, Taiwan, China.

Electrochemically Synthesized Nanocomposites for MEMS Device Performance Enhancement

Chao-Hsin Chien

National Chiao-Tung University, Taiwan, China

Interfacial Layer Engineering for Ge MOSFET by Metal Element Doping and Characterization of Interface Density

Chaojiang Li1, Arvind Kumar1, Xiaowei Tian1, Ned Cahoon1, Myra Boenke1, Dawn Wang1, Alvin Joseph1, Hua Wang2, Gabriel Rebeiz3

1GLOBALFOUNDRIES, USA; 2Georgia Institute of Technology, USA; 3 University of California, USA

Ka Band FEM Design Comparison with 45nm RFSOI CMOS and High Performance SiGe BiCMOS

Chenhsin Lien$, Hao-Ling Tang†$, Ming-Hui Chiu, Kuan-Jhih Hou$, Shih-Hsien Yang$‡, Jhih-Fong Su$, Yen-Fu Lin, Lain-Jong Li%

$National Tsing Hua University, Taiwan; King Abdullah University of Science & Technology (KAUST), Saudi Arabia; National Chung Hsing University, Taiwan, China; %Taiwan Semiconductor Manufacturing Company, Taiwan, China

High Performance WSe2 Transistors with Multilayer Graphene Source/Drain

Chih-Hung Chen, Xuesong Chen, Phillip V. Do

McMaster University, Canada

Recent Advancement in High-Frequency Noise Characterization for Nano-Scale FETs

Chong-Rong Lee, Tse-Wei Wang, Yi-Lin Tsai, Tsung-Hsien Lin

National Taiwan University, Taiwan, China

A 0.5-V 400-MHz Transceiver Using Injection-Locked Techniques in 180-nm

Chua-Chin Wang, Hsiang-Yu Shih, Wei Wang

National Sun Yat-Sen University, Taiwan, China

High SFDR Pipeline ROM-less DDFS Design on FPGA Platform Using Parabolic Equations

Cong Hao, Deming Chen

University of Illinois, Urbana-Champaign

Deep Neural Network Model and FPGA Accelerator Co-Design: Opportunities and Challenges

E. Bury1, A. Chasin1, B. Kaczer1, K.-H. Chuang1,2, J. Franco1, M. Simicic1,2, P. Weckx1, D. Linten1

1imec, Belgium; 2KU Leuven, Belgium

Recent insights in CMOS reliability characterization by the use of degradation maps

Eddy Simoen1,2, Romain Ritzenthaler1, Tom Schram1, Hiroaki Arimura1, Naoto Horiguchi1, Cor Claeys3

1Imec, Belgium; 2 Ghent University, Belgium; 3KU Leuven, Belgium

On the Low-Frequency Noise of High-k Gate Stacks: What Did We Learn?

Elena Chan1, Dequan Lin1, 2, 3, Zili Tang1, Lei Lu1, 4, Kevin Chau1, 2,  Man Wong1

1The Hong Kong University of Science and Technology, Hong Kong, China; 2Chinese Academy of Sciences, China; 3The University of Chinese Academy of Sciences, China; 4The HKUST Jockey Club Institute for Advanced Study, Hong Kong, China

HIGH-PRESSURE HIGH-TEMPERATURE BULK-TYPE PIEZORESISTIVE PRESSURE SENSOR

F.Ávila Herrera1, Y.Hirano1, T.Iizuka1, M. Miura-Mattausch1, H. Kikuchihara1, D. Navarro1, H. J. Mattausch1, A. Ito2

1Hiroshima University, Japan; 2Broadcom Inc., USA

Recent Challenges in Compact Modeling of Short-Channel Effect for Leading-Edge Types of MOSFETs

Fengwei An

Panasonic Semiconductor Solutions Co., Ltd

Multi-port SRAM with Multi-bank for Self-organizing Maps Neural Network(Invited paper)

Francis Balestra

Univ. Grenoble Alpes, France

Nanoscale FETs for high performance and ultra low power operation at the end of the Roadmap

Frank Lee

Synopsys Inc., USA

Accelerate Innovations in Robust Circuit Design with Python API to Circuit Simulation

Haixia Zhang

Peking University, China

Self Powered Smart Sensing System

Hang-Ting Lue, Keh-Chung Wang, Chih-Yuan Lu

Macronix International Co., Taiwan, China

3D AND-type NVM for In-Memory Computing of Artificial Intelligence

Hans-Joachim L. Gossmanna, Benjamin Colombeaub, Nicolas Breilc

aApplied Materials, USA; bApplied Materials, USA; cApplied Materials, USA

FinFET and Nanowire-FET Device Design and Integration: FEOL Challenges and Solutions

Haruo Kobayashi, Jiang-Lin Wei, Masahiro Murakami, Jun-ya Kojima, Nene Kushita, YuanyangDu, Jianlong Wang

Gunma University, Japan

Performance Improvement of Delta-Sigma ADC/DAC/TDC Using Digital Technique

Haruo Kobayashi, Yuto Sasaki, Hirotaka Arai, Dan Yao, Yujie Zhao, Xueyan Bai, Anna Kuwana

Gunma University, Japan

Unified Methodology of Analog/Mixed-Signal IC Design Based on Number Theory

Huiqing Wen, Wen Liu, Cezhou Zhao

Xi'an Jiaotong-Liverpool University, China

Evaluations of GaN-on-Si devices for Power Electronics Applications

J. Hao1, D. Hahn1, A. Ghosh1, M. Rinehimer2, J. Yedinak2, B. McGowan1, C. Choi1, T. Kopley3

1ON Semiconductor, USA; 2ON Semiconductor, USA; 3ON Semiconductor, USA

Drift region engineering to reduce hot carrier effects on high voltage MOSFETs

J. Wan1, WZ. Bao1, JN. Deng1, ZX. Guo1, XY. Cao1, BR. Lu1, YF. Chen1, A. Zaslavsky2, S. Cristoloveanu3 ,M. Bawedin3

1Fudan University, China; 2Brown University, USA; 3IMEP-LAHC, France

ICPD: an SOI-based photodetector with high responsivity and tunable response spectrum

James Ma, Fahad Ali Usmani, Lianfeng Yang, Zhihong Liu

ProPlus Design Solutions Inc., USA.

On-wafer Low-frequency Noise Characterization of Transistors Over a Wide Range of Operating Currents

Jer-Chyi Wang1,2,3, Rajat Subhra Karmakar1

1Chang Gung University, Taiwan, China; 2Chang Gung Memorial Hospital, Taiwan, China; 3Ming Chi University of Technology, Taiwan, China

PEDOT:PSS Piezoresistive Pressure Sensing Array with Gold-Nanoparticle Incorporation

Jian FuZhang, Meng Duan, Zhigang Ji, Weidong Zhang

Liverpool John Moores University, UK

A framework for defects in PBTI and hot carrier ageing

Jiansheng Xu, Xingang Wang

Skyworks Solutions, Inc., CA

Modeling Mutual Coupling Capacitance Effects of Package RDL to Chip on Radio Frequency ICs

Jianxi Wu, Jianfu Lin, Haikun Jia, Baoyong Chi

Tsinghua University, China

Millimeter-Wave FMCW Signal Generators for Radar Applications

Jiezhi Chen

Shandong University, P. R. China

On the Reliability of Charge-Trap (CT) Type Three-dimensional (3D) NAND Flash Memory

Jimmy Ng1, Talmage Jones2, Jonathan Hopkins2, Ya-Hong Xie1

1University of California Los Angeles, USA; 2 University of California Los Angeles, USA

A Suspended Graphene Resonator for THz DC-to-AC Conversion

Jun Tao1, Zhengqi Gao1, Dian Zhou1,2,  Xuan Zeng1

1Fudan University, China; 2University of Texas at Dallas, USA,

Efficient Statistical Analysis for Correlated Rare Failure Events

Junichi Murota

Tohoku University, Japan.

Langmuir-Type Mechanism for In-Situ Boron Doping in CVD Si1-xGex Epitaxial Growth

Jyi-Tsong Lin1, Chih-Ting Yeh1, Steve W. Haga2, Cheng-Chun Kuo1, Chun-Shuo Chou1

1National Sun Yat-Sen University, Taiwan, China; 2National Sun Yat-Sen University, Taiwan, China

A New Type of Gated-PN TFET to Overcome the Ambipolar and Trap-Assisted Tunneling Effects

K. N. Tu, Yingxia Liu

UCLA, USA

Can AI help reliability analysis of 3D IC mobile devices?

Kang Wei, D. Brian Ma

The University of Texas at Dallas, USA

State-of-the-Art Monolithic Switched-Capacitor Voltage Regulators for Ultra-Low Power Internet of Things

Kazunari Ishimaru

Toshiba Memory Corporation, JAPAN

Non-volatile Memory Technology for Data Age

Kei May Lau

Hong Kong University of Science and Technology, Hong Kong, China

Integration of III-V Compounds on Silicon by Hetero-epitaxy

Koji Nii1, Makoto Yabuuchi1, Yohei Sawada1, Shinji Tanaka1,Yoshihiro Shinozaki2, Kyoji Ito2, Yukiko Umemoto2, Yoshiki Yamamoto1, Takumi Hasegawa1, Hiroki Shinkawata1, and Shiro Kamohara1

1Renesas Electronics Corporation, Japan; 2Nippon Systemware Co. Ltd.,  Japan

Ultra-Low-Standby Power 6T Single-port and 8T Dual-port SRAMs on 65 nm Silicon-on-Thin-Box (SOTB) for Smart IoT Applications

Kuan-Neng Chen

National Chiao Tung University, Taiwan, China

Low Temperature Bonding Technology Development for 3D and Heterogeneous Integration

Kun-Ji Chen1, 2, Jian Liu1, 2, Yuefei Wang1, 2, Huafeng Yang1, 2, Zhongyuan Ma1, 2, Xinfan Huang1, 2

1Nanjing University, China; 2Nanjing University, China

Conductive defect states based filament in MOM structure RRAM

Lan Wei, Kaship Sheikh

University of Waterloo, Canada

Impact of Process Imperfection of CNFET on Circuit-level Performance and Proposal to Improve Using Approximate Circuits

Lee Bai Song Samuel, Thangarasu Bharatha Kumar, Zou Qiong, Yeo Kiat Seng

Singapore University of Technology and Design, Singapore

An Inductorless Differential Transimpedance Amplifier Design for 5 GHz Optical Communication using 0.18-μm CMOS

Lei Liao, Xuming Zou, Jingli Wang

Hunan University, China

High-Performance MoS2 Field Effect Transistors

Lijie Sun, Waisum Wong, Hung HsuTseng, RenbinShi, Xiaobo Jiang, Jiewen Fan, Guangxing Wan

Hisilicon Corporation, China

A Novel Customized RC Tightened Corner Modeling Methodology Using Statistical SPICE Simulation in Advanced FinFET Technology

Liying Xu, Lin Bao, Teng Zhang, Ke Yang, Yimao Cai, Yuchao Yang, Ru Huang

Peking University, China.

Nonvolatile memristor as a new platform for non-von Neumann computing

Li-yuan Liu1,2, Tong Fang1,2, Jian Liu1,2 , Nan-jian Wu1,2

1Chinese Academy of Sciences, China; 2 The University of Chinese Academy of Sciences, China

Design, Implementation and Characteristic of CMOS Terahertz Detectors: an overview

M. Hong1, Y. H. Lin1, H. W. Wan1, W. S. Chen1, Y. T. Cheng1, C. P. Cheng2, T. W. Pi3, J. Kwo4

1Natl. Taiwan Univ., Taiwan, China; 2National Chiayi University, Taiwan, China; 3National Synchrotron Radiation Research Center, Taiwan, China; 4National Tsing Hua University, Taiwan, China

Interfacial perfection for pushing InGaAs and Ge MOS device limits

Mengchuan Tian, Xiong Xiong, Mingqiang Huang, Tiaoyang Li, Shengman Li, Qianlan Hu, Xuefei Li, Yanqing Wu

Huazhong University of Science and Technology, China

High-performance two-dimensional transistors and circuits

Mengyuan Hua, Kevin J. Chen

The Hong Kong University of Science and Technology, Hong Kong, China

Reliability and Stability of Normally-off GaN Power MIS-FETs with LPCVD-SiNx Gate Dielectric

Ming Li, Jiewen Fan

Peking University, China

ESD Robustness of Silicon Nanowire Transistor (SNWT) Combined with Thermal Analysis and Optimization

Ming-Hsiu Lee, Yu-Hsuan Lin, Yu-Yu Lin, Feng-Ming Lee, Dai-Ying Lee, Kuang-Yeu Hsieh

Macronix Emerging Central Lab.; Macronix International Co., Ltd.

Studies on ReRAM Conduction Mechanism and the Varying-bias Read Scheme for MLC and Wide Temperature Range TMO ReRAM

Min-hwa Chi, Deyuan Xiao, Richard Chang

SiEn Integrated Circuits Co., China

Fast Development of IC Technologies in AI and IoT Era

Minoru Fujishima

Hiroshima University, Japan

300-GHz-Band Wireless Transceiver with CMOS Integrated Circuits

N.Collaert, A.Alian, S.-H.Chen, V.Deshpande, M.Ingels, V.Putcha1, A.Sibaja-Hernandez, B.van Liempd, A.Vais, A. Vandooren, A.Walke, L.Witters, H.Yu1, D.Linten, B.Parvais2, P.Wambacq2, N.Waldron

Imec, Belgium; 1KU Leuven, Leuven, Belgium; 2Vrije Universiteit Brussel, Belgium

Semiconductor Technologies for next Generation Mobile Communications

Nobuyuki Otsuka, Yuji Kudoh, Hiroaki Ueno, Asamira Suzuki

Automotive & Industrial Systems Company, Panasonic, Japan

Recent Progress in GaN Device Technology

Peide D. Ye

Purdue University, USA

Steep-Slope Hysteresis-Free Negative-Capacitance 2D Transistors

Pei-Wen Li

National Chiao Tung University, Taiwan, China

Back to the Future: Germanium nanoengineering reemerges as the savior of Si functional devices

Peng Lu1, Yen Teng Ho2, Yung-Ching Chu2, Ming Zhang1, Po-Yen Chien1, Tien-Tung Luong2, Edward Yi Chang2, Jason C.S. Woo1

1University of California, USA; 2National Chiao Tung University, Taiwan, China

Electrical Properties of Compound 2D Semiconductor Mo1-xNbxS2

Preetpal Singh1, Cher Ming Tan1, 2, 3, 4, Hao-Chung Kuo5

1Chang Gung University, Taiwan, China; 2Chang Gung University, Taiwan, China; 3Chang Gung Memorial Hospital, Taiwan, China; 4Ming Chi University of Technology, Taiwan, China; 5National Chiao Tung University, Taiwan, China

Degradation Mechanisms for CdSe Quantum dot down converted LEDs

Qinghua Han, Paulus Aleksa, Juergen Schubert, Siegfried Mantl, Qing-Tai Zhao

Peter Grünberg Institute (PGI-9) and JARA-FIT, Germany

Subthreshold Behavior of MFMIS and MFIS Transistors caused by Ferroelectric Polarization Switching

Robert Sokolovskij1,3, Jian Zhang2, Yang Jiang3,4, Ganhui Chen3,4, Guo Qi Zhang1, Hongyu Yu3,4

1Delft University of Technology, Netherlands; 2Fudan University, China; 3Southern University of Science and Technology, China; 4Shenzhen Key Laboratory of the Third Generation Semi-conductor, China

AlGaN/GaN HEMT micro-sensor technology for gas sensing applications

Runsheng Wang

Peking University, China

Stochastic Computing for Sub-0.2V Applications --Technology Evaluation and Design Optimization

Ruonan Han

Massachusetts Institute of Technology, MA

Wave-Matter Interactions at the Chip Scale: Devices, Systems and Opportunities

Rusong Weng, Yaguang Li, Wei Gao, Leilei Wang, Xufeng Kou, Pingqiang Zhou

ShanghaiTech University, China

Deep Learning for Spatial Supply Noise Estimation in a Processor Chip

S. Bhattacharya, T. K Maiti, S. Dutta, A. Luo, M. Miura-Mattausch, H. J. Mattausch

Hiroshima University, Japan

System Simulation for Robot Control Based on AI Approach

Sebastian Thiele, Frank Schwierz

Technische Universität Ilmenau, Germany

Simulation of 1-Nanometer Gate MoS2 MOSFETs

Seiji Samukawa

Tohoku University, Japan

Atomic Layer Defect-free Top-down Process for Future Nano-devices

Shideh Kabiri Ameri1,2

1Queen’s University, Canada; 2The University of Texas at Austin, USA

Imperceptible Graphene Electronic Tattoos for Health Monitoring and Human Machine Interface

Si Wang1, Yuan Cao2;3, Chip-Hong Chang1

1Nanyang Technological University, Singapore; 2Hohai University, China; 3Southeast University, China

A Low-power Reliability Enhanced Arbiter Physical Unclonable Function Based on Current Starved Multiplexers

Song Ma, Yuhua Cheng

Peking University, China

Circuit Design Challenges and Considerations for Portable Medical Instrument System Applications

Steve S. Chung

National Chiao Tung University, Taiwan, China

Resistive Switching Non-volatile Memory Feasible for 28nm and Beyond Embedded Logic CMOS Technology

Sung-You Tsai, Yu-Cheng Chang,  Tzu-Hsien Sang

1National Chiao Tung University, Taiwan, China

SPAD LiDARs: Modeling and Algorithms

Takashi Sato

Kyoto University, Japan

A Transient Approach for Input Capacitance Characterization of Power Devices

Te-Kuang Chiang

National University of Kaohsiung, Taiwan, China

A New Quantum Scaling Theory for Nanometer Multiple-gate MOSFETs

Teruo Suzuki

Socionext Inc., Japan

Investigations of using NMOS parasitic bipolar transistor for ESD protection circuits

Tian Lang1, Zening Li1, Fei Lu1, 2, Zongyu Dong1, 3, Li Wang1, 4, Cheng Li1, Feilong Zhang1, Gang Chen1, Albert Wang1

1Universityof California, USA; 2Marvell; 3Qualcomm; 4Skyworks

LED-Based Visible Light Communication and Positioning Technology and SoCs

Ting-Sheng Chen, Kai-Ni Hou, Yo-Woei Pua, An-Yeu (Andy) Wu

National Taiwan University, Taiwan, China

Overview of Efficient Compressive Sensing Reconstruction Engines for E-Health Applications

Toshiro Hiramoto, Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi

University of Tokyo, Japan

Improving Data Retention Voltage in SRAM by Post-Fabrication Multiple Stress Application

W.Zhang, Z.Chai, J. Ma, J. F. Zhang

Liverpool John Moores University, UK

Analysis of switching, degradation and failure mechanisms by RTN signals in non-filamentary (a-VMCO) RRAM devices

Wai Tung Ng, Jingshu Yu, Mengqi Wang, Rophina Li, Weijia Zhang

University of Toronto, Canada

Design Trends in Smart Gate Driver ICs for Power GaN HEMTs

Wenjian Yu, Mingye Song, Zhezhao Xu

Tsinghua University, China.

Recent Advance on Floating Random Walk Based Capacitance Solver for VLSI Circuit Design

Xiaotang Tang*, Sheldon X.-D. Tan, Hai-Bao Chen*

*Shanghai Jiaotong University , China; University of California , CA

SVM Based Intrusion Detection Using Nonlinear Scaling Scheme

Xiao-Yan Qiu1, Ming-Long Wei1, Xue Jiang1, Hei-Man Yau2, Jing-Wei Gao2, Ji-Yan Dai2

1Southwest University, China; 2The Hong Kong Polytechnic University, Hong Kong, China.

Ultra-low voltage resistive switching of HfO2-buffered NiO epitaxial films on metal seed layers

Xiaoyu Sun1, Rui Liu1, Xiaochen Peng1, Shimeng Yu2

1Arizona State University, USA; 2Georgia Institute of Technology, USA

Computing-in-Memory with SRAM and RRAM for Binary Neural Networks

Xing Zhou, Siau Ben Chiah

Nanyang Technological University, Singapore

Monolithic III-V/CMOS Co-integrated Technology, Scalable Compact Modeling, and Hybrid Circuit Design

Xintong Zhang1, Lining Zhang2, Mansun Chan1

1The Hong Kong University of Science and Technology, Hong Kong, China; 2Shenzhen University, China

Engineering of Graphene-to-Semiconductor Contacts

Xizhu Peng1, Tujian Fu1, Qingqing Bao1, Chuanwei Peng1, Haoyu Zhuang1, He Tang1

1University of Electronic Science and Technology of China, China

A New Capacitor Mismatch Calibration Technique for SAR ADCs

Yang You, Jinghong Chen

University of Houston, USA

A Temperature-Compensated LC-VCO PLL and a Power-Efficient Decision Feedback Equalizer for Multi-Standard Serial Links

Yann Deval, Andrés Asprilla, David Cordova, Hervé Lapuyade, François Rivet

Université de Bordeaux, France

DLL-Enhanced PLL Frequency Synthesizer with Two Feedback Loops and Body Biasing for Noise Cleaning

You Yin, Ryoya Satoh, Keita Sawao

Gunma University, Japan

Chalcogenide-Based Artificial Intelligence Synaptic Device

Yuanzhong (Paul) Zhou, Jean-Jacques Hajjar, Srivats Parthasarathy

Analog Devices Inc., USA

Circuit Level ESD Simulation with SPICE: Successes and Challenges

Yue Kuo

Texas A&M University, USA

Progress of Thin Film Transistor Technology

Yuke Zhang, Ching-Yun Ko, Cong Chen, Kim Batselier, Ngai Wong

The University of Hong Kong, Hong Kong, China

Sparse Tensor Network System Identification for Nonlinear Circuit Macromodeling

YutingKong1, DongNi1

1Zhejiang University, China

Semi-Supervised Classification of Wafer Map Based on Ladder Network

Zaixing Yang1, Johnny C. Ho2

1Shandong University , China; 2City University of Hong Kong, Hong Kong

Orientation controlled GaSb nanowires: from growth to application

Zhiping Yu, *Jiaqi Jiang, Yan Wang

Tsinghua University, China; *Stanford University, USA

Robustness Analysis of Quantum State Transfer through Spin-Chain in Diamond for Room-Temperature Quantum Computing

Zihan Yao, Hojoon Ryu, Kai Xu, Jialun Liu, Yuhang Cai, Yueming Yan, Wenjuan Zhu

University of Illinois at Urbana-Champaign, USA

Nanoscale Devices Based on Two-dimensional Materials and Ferroelectric Materials

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